دیتاشیت TN2124K1-G
مشخصات دیتاشیت
| نام دیتاشیت |
TN2124
|
| حجم فایل |
1425.89
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
14
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Microchip Tech TN2124K1-G
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
360mW
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Drain Source Voltage (Vdss):
240V
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Input Capacitance (Ciss@Vds):
50pF@25V
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Continuous Drain Current (Id):
134mA
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Gate Threshold Voltage (Vgs(th)@Id):
2V@1mA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
15Ω@120mA,4.5V
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Package:
SOT-23-3
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Manufacturer:
Microchip Tech
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
240V
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Current - Continuous Drain (Id) @ 25°C:
134mA (Tj)
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Drive Voltage (Max Rds On, Min Rds On):
3V, 4.5V
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Rds On (Max) @ Id, Vgs:
15Ohm @ 120mA, 4.5V
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Vgs(th) (Max) @ Id:
2V @ 1mA
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
360mW (Tc)
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Mounting Type:
Surface Mount
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Supplier Device Package:
TO-236AB (SOT23)
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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detail:
N-Channel 240V 134mA (Tj) 360mW (Tc) Surface Mount TO-236AB (SOT23)
