TN2425N8-G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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TN2425N8-G
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حجم فایل
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60.631
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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14
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Microchip Tech TN2425N8-G
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
1.6W
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Drain Source Voltage (Vdss):
250V
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Input Capacitance (Ciss@Vds):
200pF@25V
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Continuous Drain Current (Id):
480mA
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Gate Threshold Voltage (Vgs(th)@Id):
2.5V@1mA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
3.5Ω@500mA,10V
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Package:
SOT-89-3
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Manufacturer:
Microchip Tech
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
25V
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Current - Continuous Drain (Id) @ 25°C:
480mA (Tj)
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Drive Voltage (Max Rds On, Min Rds On):
3V, 10V
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Rds On (Max) @ Id, Vgs:
3.5Ohm @ 500mA, 10V
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Vgs(th) (Max) @ Id:
2.5V @ 1mA
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
200pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
1.6W (Tc)
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Mounting Type:
Surface Mount
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Supplier Device Package:
SOT-89-3
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Package / Case:
TO-243AA
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detail:
N-Channel 25V 480mA (Tj) 1.6W (Tc) Surface Mount SOT-89-3
