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BQ4010YMA-200 Datasheet
Datasheet specifications
| Datasheet's name | BQ4010(Y,LY) |
|---|---|
| File size | 357.545 KB |
| File type | |
| Number of pages | 16 |
Download Datasheet BQ4010(Y,LY) |
Download Datasheet |
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Other documentations
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Technical specifications
- Series: -
- Technology: NVSRAM (Non-Volatile SRAM)
- Supplier Device Package: 28-DIP Module (18.42x37.72)
- Package / Case: 28-DIP Module (0.61", 15.49mm)
- Write Cycle Time - Word, Page: 200ns
- Memory Format: NVSRAM
- Mounting Type: Through Hole
- Part Status: Obsolete
- Access Time: 200ns
- Operating Temperature: 0°C ~ 70°C (TA)
- Manufacturer: Texas Instruments
- Memory Interface: Parallel
- Memory Size: 64Kb (8K x 8)
- Voltage - Supply: 4.5V ~ 5.5V
- Packaging: Tube
- Base Part Number: BQ4010
- Memory Type: Non-Volatile
- detail: NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 200ns 28-DIP Module (18.42x37.72)