TP0620N3-G دیتاشیت

TP0620N3-G

مشخصات دیتاشیت

نام دیتاشیت TP0620N3-G
حجم فایل 61.144 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

مشاهده دیتاشیت TP0620N3-G

دانلود دیتاشیت

سایر مستندات

TP0620 14 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Microchip Tech TP0620N3-G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1W
  • Drain Source Voltage (Vdss): 200V
  • Input Capacitance (Ciss@Vds): 150pF@25V
  • Continuous Drain Current (Id): 175mA
  • Gate Threshold Voltage (Vgs(th)@Id): 2.4V@1mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12Ω@200mA,10V
  • Package: TO-92
  • Manufacturer: Microchip Tech
  • Series: -
  • Packaging: Bulk
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • detail: P-Channel 200V 175mA (Tj) 1W (Ta) Through Hole TO-92-3

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