دیتاشیت BFU730F,115

BFU730F

مشخصات دیتاشیت

نام دیتاشیت BFU730F
حجم فایل 131.881 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

دانلود دیتاشیت BFU730F

BFU730F Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: NXP Semicon BFU730F,115
  • Transistor Type: NPN
  • Collector Current (Ic): 30mA
  • Power Dissipation (Pd): 197mW
  • Transition Frequency (fT): 55GHz
  • DC Current Gain (hFE@Ic,Vce): 205@2mA,2V
  • Collector-Emitter Breakdown Voltage (Vceo): 2.8V
  • Package: SOT-343
  • Manufacturer: NXP Semicon
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 55GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz
  • Gain: -
  • Power - Max: 197mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 2V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
  • Base Part Number: BFU73
  • detail: RF Transistor NPN 2.8V 30mA 55GHz 197mW Surface Mount 4-DFP

دیتاشیت محصولات مشابه