دیتاشیت TP2510N8-G
مشخصات دیتاشیت
| نام دیتاشیت |
TP2510
|
| حجم فایل |
314.137
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
14
|
مشخصات
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Microchip Tech TP2510N8-G
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
1.6W
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Drain Source Voltage (Vdss):
100V
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Input Capacitance (Ciss@Vds):
125pF@25V
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Continuous Drain Current (Id):
480mA
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Gate Threshold Voltage (Vgs(th)@Id):
2.4V@1mA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
3.5Ω@750mA,10V
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Package:
SOT-89-3
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Manufacturer:
Microchip Tech
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
100V
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Current - Continuous Drain (Id) @ 25°C:
480mA (Tj)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
3.5Ohm @ 750mA, 10V
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Vgs(th) (Max) @ Id:
2.4V @ 1mA
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
125pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
1.6W (Ta)
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Mounting Type:
Surface Mount
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Supplier Device Package:
TO-243AA (SOT-89)
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Package / Case:
TO-243AA
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detail:
P-Channel 100V 480mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
