CSD17308Q3 دیتاشیت

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دانلود دیتاشیت CSD17308Q3	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: Texas Instruments CSD17308Q3
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 2.7W
Total Gate Charge (Qg@Vgs): 5.1nC@4.5V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 700pF@15V
Continuous Drain Current (Id): 14A;44A
Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 10.3mΩ@8V,10A
Package: VSON-CLIP-8(3.3x3.3)
Manufacturer: Texas Instruments
FET Feature: -
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Package / Case: 8-PowerTDFN
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 8V
Base Part Number: CSD173
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Technology: MOSFET (Metal Oxide)
Power Dissipation (Max): 2.7W (Ta)
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
Mounting Type: Surface Mount
Part Status: Active
Vgs (Max): +10V, -8V
Series: NexFET™
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
detail: N-Channel 30V 14A (Ta), 44A (Tc) 2.7W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)