MSCSM120HM16CT3AG دیتاشیت

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مشاهده دیتاشیت MSCSM120HM16CT3AG	دانلود دیتاشیت

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Manufacturer: Microchip Technology
Series: -
Part Status: Active
FET Type: 4 N-Channel
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 745W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP3F
detail: Mosfet Array 4 N-Channel 1200V (1.2kV) 173A (Tc) 745W (Tc) Chassis Mount SP3F