دیتاشیت TN5325N3-G-P002
مشخصات دیتاشیت
| نام دیتاشیت | TN5325 Datasheet |
|---|---|
| حجم فایل | 865.458 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 14 |
دانلود دیتاشیت TN5325 Datasheet |
TN5325 Datasheet Datasheet |
|---|
مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Microchip Tech TN5325N3-G-P002
- Power Dissipation (Pd): 740mW
- Drain Source Voltage (Vdss): 250V
- Input Capacitance (Ciss@Vds): 110pF@25V
- Continuous Drain Current (Id): 215mA
- Gate Threshold Voltage (Vgs(th)@Id): 2V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7Ω@1A,10V
- Package: TO-92
- Manufacturer: Microchip Tech
- Series: -
- Packaging: Tape & Reel (TR)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 215mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 740mW (Ta)
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- detail: N-Channel 250V 215mA (Ta) 740mW (Ta) Through Hole TO-92-3
