TP5322N8-G دیتاشیت

TP5322N8-G

مشخصات دیتاشیت

نام دیتاشیت TP5322N8-G
حجم فایل 64.269 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

مشاهده دیتاشیت TP5322N8-G

دانلود دیتاشیت

سایر مستندات

TP5322 12 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Microchip Tech TP5322N8-G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1.6W
  • Drain Source Voltage (Vdss): 220V
  • Input Capacitance (Ciss@Vds): 110pF@25V
  • Continuous Drain Current (Id): 260mA
  • Gate Threshold Voltage (Vgs(th)@Id): 2.4V@1mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12Ω@200mA,10V
  • Package: SOT-89-3
  • Manufacturer: Microchip Tech
  • Series: -
  • Packaging: Tape & Reel (TR)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 220V
  • Current - Continuous Drain (Id) @ 25°C: 260mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
  • detail: P-Channel 220V 260mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

محصولات مشابه