دیتاشیت SI4410DY,518

SI4410DY

مشخصات دیتاشیت

نام دیتاشیت SI4410DY
حجم فایل 484.977 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

دانلود دیتاشیت SI4410DY

SI4410DY Datasheet

مشخصات

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • Packaging: Tape & Reel (TR)
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Base Part Number: SI4
  • detail: N-Channel 30V 2.5W (Ta) Surface Mount 8-SO