دیتاشیت SI4410DY,518
مشخصات دیتاشیت
نام دیتاشیت |
SI4410DY
|
حجم فایل |
484.977
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
13
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
TrenchMOS™
-
Packaging:
Tape & Reel (TR)
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
30V
-
Current - Continuous Drain (Id) @ 25°C:
-
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
-
Rds On (Max) @ Id, Vgs:
13.5mOhm @ 10A, 10V
-
Vgs(th) (Max) @ Id:
1V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
34nC @ 5V
-
Vgs (Max):
±20V
-
FET Feature:
-
-
Power Dissipation (Max):
2.5W (Ta)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
8-SO
-
Package / Case:
8-SOIC (0.154", 3.90mm Width)
-
Base Part Number:
SI4
-
detail:
N-Channel 30V 2.5W (Ta) Surface Mount 8-SO