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SI4410DY,518 Datasheet
Datasheet specifications
| Datasheet's name | SI4410DY |
|---|---|
| File size | 484.977 KB |
| File type | |
| Number of pages | 13 |
Download Datasheet SI4410DY |
Download Datasheet |
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Other documentations
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Technical specifications
- Manufacturer: NXP USA Inc.
- Series: TrenchMOS™
- Packaging: Tape & Reel (TR)
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Base Part Number: SI4
- detail: N-Channel 30V 2.5W (Ta) Surface Mount 8-SO