دیتاشیت PHD3055E,118
مشخصات دیتاشیت
| نام دیتاشیت |
PHD,PHP3055E
|
| حجم فایل |
325.294
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
14
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
TrenchMOS™
-
Packaging:
Tape & Reel (TR)
-
Part Status:
Obsolete
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FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
60V
-
Current - Continuous Drain (Id) @ 25°C:
10.3A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
150mOhm @ 5.5A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs:
5.8nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
250pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
33W (Tc)
-
Operating Temperature:
-55°C ~ 175°C (TJ)
-
Mounting Type:
Surface Mount
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Supplier Device Package:
DPAK
-
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
-
Base Part Number:
PHD30
-
detail:
N-Channel 60V 10.3A (Tc) 33W (Tc) Surface Mount DPAK
