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PSMN3R7-25YLC,115 Datasheet
Datasheet specifications
| Datasheet's name | PSMN3R7-25YLC |
|---|---|
| File size | 237.634 KB |
| File type | |
| Number of pages | 15 |
Download Datasheet PSMN3R7-25YLC |
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Other documentations
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Technical specifications
- Manufacturer: NXP USA Inc.
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 1.95V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 12V
- FET Feature: -
- Power Dissipation (Max): 64W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
- Base Part Number: PSMN3
- detail: N-Channel 25V 97A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8