دیتاشیت BUK652R7-30C,127

BUK652R7-30C

مشخصات دیتاشیت

نام دیتاشیت BUK652R7-30C
حجم فایل 377.912 کیلوبایت
نوع فایل pdf
تعداد صفحات 16

دانلود دیتاشیت BUK652R7-30C

BUK652R7-30C Datasheet

مشخصات

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 6960pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 204W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • Base Part Number: BUK65
  • detail: N-Channel 30V 100A (Tc) 204W (Tc) Through Hole TO-220AB

دیتاشیت محصولات مشابه