دیتاشیت BSH205,215
مشخصات دیتاشیت
| نام دیتاشیت |
BSH205
|
| حجم فایل |
119.198
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Obsolete
-
FET Type:
P-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
12V
-
Current - Continuous Drain (Id) @ 25°C:
750mA (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
-
Rds On (Max) @ Id, Vgs:
400mOhm @ 430mA, 4.5V
-
Vgs(th) (Max) @ Id:
680mV @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs:
3.8nC @ 4.5V
-
Vgs (Max):
±8V
-
Input Capacitance (Ciss) (Max) @ Vds:
200pF @ 9.6V
-
FET Feature:
-
-
Power Dissipation (Max):
417mW (Ta)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
TO-236AB (SOT23)
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Base Part Number:
BSN2
-
detail:
P-Channel 12V 750mA (Ta) 417mW (Ta) Surface Mount TO-236AB (SOT23)
