VN2410 数据手册
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VN2410L-G-P013 3 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Microchip Tech VN2410L-G-P014
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 1W
- Drain Source Voltage (Vdss): 240V
- Input Capacitance (Ciss@Vds): 125pF@25V
- Continuous Drain Current (Id): 190mA
- Gate Threshold Voltage (Vgs(th)@Id): 2V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 10Ω@500mA,10V
- Package: TO-92
- Manufacturer: Microchip Tech
- Series: -
- Packaging: Tape & Box (TB)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- detail: N-Channel 240V 190mA (Tj) 1W (Tc) Through Hole TO-92-3