PHB110NQ06LT دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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PHB110NQ06LT
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حجم فایل
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214.893
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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13
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مشخصات فنی
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Manufacturer:
NXP USA Inc.
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Series:
TrenchMOS™
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Packaging:
Cut Tape (CT)
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Part Status:
Obsolete
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
55V
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Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
7mOhm @ 25A, 10V
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Vgs(th) (Max) @ Id:
2V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
45nC @ 5V
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Vgs (Max):
±15V
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Input Capacitance (Ciss) (Max) @ Vds:
3960pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
200W (Tc)
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Operating Temperature:
-55°C ~ 175°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
D2PAK
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Part Number:
PHB11
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detail:
N-Channel 55V 75A (Tc) 200W (Tc) Surface Mount D2PAK
