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PN2907A,116 Datasheet
Datasheet specifications
| Datasheet's name | PN2907A |
|---|---|
| File size | 131.292 KB |
| File type | |
| Number of pages | 7 |
Download Datasheet PN2907A |
Download Datasheet |
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Other documentations
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Technical specifications
- Manufacturer: NXP USA Inc.
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Base Part Number: PN29
- detail: Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 500mW Through Hole TO-92-3