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2N7002K,215 Datasheet
Datasheet specifications
| Datasheet's name | 2N7002K Datasheet |
|---|---|
| File size | 351.153 KB |
| File type | |
| Number of pages | 13 |
Download Datasheet 2N7002K Datasheet |
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Technical specifications
- Manufacturer: NXP USA Inc.
- Series: TrenchMOS™
- Packaging: Cut Tape (CT)
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.9Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
- FET Feature: -
- Power Dissipation (Max): 830mW (Ta)
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Base Part Number: 2N70
- detail: N-Channel 60V 340mA (Ta) 830mW (Ta) Surface Mount TO-236AB (SOT23)