PMV65UN,215 دیتاشیت

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مشاهده دیتاشیت PMV65UN Datasheet	دانلود دیتاشیت

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Manufacturer: NXP USA Inc.
Series: -
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 76mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 183pF @ 10V
FET Feature: -
Power Dissipation (Max): 310mW (Ta), 2.17W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-236AB (SOT23)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: PMV6
detail: N-Channel 20V 2.2A (Ta) 310mW (Ta), 2.17W (Tc) Surface Mount TO-236AB (SOT23)