دیتاشیت PMT760EN,135
مشخصات دیتاشیت
| نام دیتاشیت |
PMT760EN
|
| حجم فایل |
337.847
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
14
|
مشخصات
-
Manufacturer:
NXP USA Inc.
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Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
100V
-
Current - Continuous Drain (Id) @ 25°C:
900mA (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
-
Rds On (Max) @ Id, Vgs:
950mOhm @ 800mA, 10V
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
3nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
160pF @ 80V
-
FET Feature:
-
-
Power Dissipation (Max):
800mW (Ta), 6.2W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
SOT-223
-
Package / Case:
TO-261-4, TO-261AA
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Base Part Number:
PMT7
-
detail:
N-Channel 100V 900mA (Ta) 800mW (Ta), 6.2W (Tc) Surface Mount SOT-223
