دیتاشیت PMV185XN,215
مشخصات دیتاشیت
| نام دیتاشیت |
PMV185XN
|
| حجم فایل |
323.204
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
15
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30V
-
Current - Continuous Drain (Id) @ 25°C:
1.1A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
-
Rds On (Max) @ Id, Vgs:
250mOhm @ 1.1A, 4.5V
-
Vgs(th) (Max) @ Id:
1.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
1.3nC @ 4.5V
-
Vgs (Max):
±12V
-
Input Capacitance (Ciss) (Max) @ Vds:
76pF @ 15V
-
FET Feature:
-
-
Power Dissipation (Max):
325mW (Ta), 1.275W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
TO-236AB (SOT23)
-
Package / Case:
TO-236-3, SC-59, SOT-23-3
-
Base Part Number:
PMV1
-
detail:
N-Channel 30V 1.1A (Ta) 325mW (Ta), 1.275W (Tc) Surface Mount TO-236AB (SOT23)
