دیتاشیت BUK961R4-30E,118

BUK961R4-30E

مشخصات دیتاشیت

نام دیتاشیت BUK961R4-30E
حجم فایل 527.067 کیلوبایت
نوع فایل pdf
تعداد صفحات 15

دانلود دیتاشیت BUK961R4-30E

BUK961R4-30E Datasheet

مشخصات

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • Packaging: Cut Tape (CT)
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 113nC @ 5V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 16150pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: BUK96
  • detail: N-Channel 30V 120A (Tc) 357W (Tc) Surface Mount D2PAK