دیتاشیت BUK961R4-30E,118
مشخصات دیتاشیت
نام دیتاشیت |
BUK961R4-30E
|
حجم فایل |
527.067
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
15
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
TrenchMOS™
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Packaging:
Cut Tape (CT)
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Part Status:
Obsolete
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FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30V
-
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
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Rds On (Max) @ Id, Vgs:
1.4mOhm @ 25A, 5V
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Vgs(th) (Max) @ Id:
2.1V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
113nC @ 5V
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Vgs (Max):
±10V
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Input Capacitance (Ciss) (Max) @ Vds:
16150pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
357W (Tc)
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Operating Temperature:
-55°C ~ 175°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
D2PAK
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Part Number:
BUK96
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detail:
N-Channel 30V 120A (Tc) 357W (Tc) Surface Mount D2PAK