PBLS2002S,115 دیتاشیت

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مشاهده دیتاشیت PBLS2002S	دانلود دیتاشیت

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Manufacturer: NXP USA Inc.
Series: -
Packaging: Cut Tape (CT)
Part Status: Obsolete
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA, 3A
Voltage - Collector Emitter Breakdown (Max): 50V, 20V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 2A, 2V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
Current - Collector Cutoff (Max): 1µA, 100nA
Frequency - Transition: 100MHz
Power - Max: 1.5W
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: PBLS20
detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 20V 100mA, 3A 100MHz 1.5W Surface Mount 8-SO