VN0300 数据手册
其他文档
VN0300L-G 3 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Microchip Tech VN0300L-G-P002
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 1W
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 190pF@20V
- Continuous Drain Current (Id): 640mA
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2Ω@1A,10V
- Package: TO-92
- Manufacturer: Microchip Tech
- Series: -
- Packaging: Tape & Reel (TR)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 20V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- detail: N-Channel 30V 640mA (Tj) 1W (Tc) Through Hole TO-92-3