PHD22NQ20T دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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PHD22NQ20T
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حجم فایل
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93.719
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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12
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مشخصات فنی
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Manufacturer:
NXP USA Inc.
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Series:
TrenchMOS™
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Packaging:
Tape & Reel (TR)
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Part Status:
Obsolete
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
200V
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Current - Continuous Drain (Id) @ 25°C:
21.1A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
120mOhm @ 12A, 10V
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Vgs(th) (Max) @ Id:
4V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
30.8nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
1380pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
150W (Tc)
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Operating Temperature:
-55°C ~ 175°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
DPAK
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Part Number:
PHD22
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detail:
N-Channel 200V 21.1A (Tc) 150W (Tc) Surface Mount DPAK
