PDTB123ES,126 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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PDTB123E Series
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حجم فایل
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133.136
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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Manufacturer:
NXP USA Inc.
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Series:
-
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Packaging:
Tape & Box (TB)
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Part Status:
Obsolete
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Transistor Type:
PNP - Pre-Biased
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Current - Collector (Ic) (Max):
500mA
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Voltage - Collector Emitter Breakdown (Max):
50V
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Resistor - Base (R1):
2.2 kOhms
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Resistor - Emitter Base (R2):
2.2 kOhms
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DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 50mA, 5V
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Vce Saturation (Max) @ Ib, Ic:
300mV @ 2.5mA, 50mA
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Current - Collector Cutoff (Max):
500nA
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Power - Max:
500mW
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Mounting Type:
Through Hole
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Supplier Device Package:
TO-92-3
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Base Part Number:
PDTB12
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detail:
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 500mW Through Hole TO-92-3
