دیتاشیت PHU11NQ10T,127

PHU11NQ10T

مشخصات دیتاشیت

نام دیتاشیت PHU11NQ10T
حجم فایل 254.503 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

دانلود دیتاشیت PHU11NQ10T

PHU11NQ10T Datasheet

مشخصات

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 57.7W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Base Part Number: PHU11
  • detail: N-Channel 100V 10.9A (Tc) 57.7W (Tc) Through Hole I-PAK

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