دیتاشیت PHX34NQ11T,127
مشخصات دیتاشیت
نام دیتاشیت |
PHX34NQ11T
|
حجم فایل |
97.216
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
12
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
TrenchMOS™
-
Packaging:
Tube
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
110V
-
Current - Continuous Drain (Id) @ 25°C:
24.8A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
40mOhm @ 17A, 10V
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Vgs(th) (Max) @ Id:
4V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
1700pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
56.8W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-220F
-
Package / Case:
TO-220-3 Full Pack, Isolated Tab
-
Base Part Number:
PHX34
-
detail:
N-Channel 110V 24.8A (Tc) 56.8W (Tc) Through Hole TO-220F