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PSMN005-55P,127 Datasheet
Datasheet specifications
| Datasheet's name | PSMN005-55B,P |
|---|---|
| File size | 123.669 KB |
| File type | |
| Number of pages | 12 |
Download Datasheet PSMN005-55B,P |
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Other documentations
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Technical specifications
- Manufacturer: NXP USA Inc.
- Series: TrenchMOS™
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 103nC @ 5V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
- Base Part Number: PSMN0
- detail: N-Channel 55V 75A (Tc) 230W (Tc) Through Hole TO-220AB