دیتاشیت PSMN009-100W,127

PSMN009-100W

مشخصات دیتاشیت

نام دیتاشیت PSMN009-100W
حجم فایل 95.496 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

دانلود دیتاشیت PSMN009-100W

PSMN009-100W Datasheet

مشخصات

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 214nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
  • Base Part Number: PSMN0
  • detail: N-Channel 100V 100A (Tc) 300W (Tc) Through Hole TO-247-3

دیتاشیت محصولات مشابه