دیتاشیت PSMN040-200W,127
مشخصات دیتاشیت
نام دیتاشیت |
PSMN040-200W
|
حجم فایل |
89.103
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
7
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
TrenchMOS™
-
Packaging:
Tube
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
200V
-
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
40mOhm @ 25A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs:
183nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
9530pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
300W (Tc)
-
Operating Temperature:
-55°C ~ 175°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-247-3
-
Package / Case:
TO-247-3
-
Base Part Number:
PSMN0
-
detail:
N-Channel 200V 50A (Tc) 300W (Tc) Through Hole TO-247-3