دیتاشیت PHB108NQ03LT,118

PHB,PHD,PHU108NQ03LT

مشخصات دیتاشیت

نام دیتاشیت PHB,PHD,PHU108NQ03LT
حجم فایل 104.091 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

دانلود دیتاشیت PHB,PHD,PHU108NQ03LT

PHB,PHD,PHU108NQ03LT Datasheet

مشخصات

  • Manufacturer: NXP USA Inc.
  • Series: TrenchMOS™
  • Packaging: Tape & Reel (TR)
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1375pF @ 12V
  • FET Feature: -
  • Power Dissipation (Max): 187W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: PHB10
  • detail: N-Channel 25V 75A (Tc) 187W (Tc) Surface Mount D2PAK

دیتاشیت محصولات مشابه