دیتاشیت PHX9NQ20T,127
مشخصات دیتاشیت
نام دیتاشیت |
PHF,PHX9NQ20T
|
حجم فایل |
116.029
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
9
|
مشخصات
-
Manufacturer:
NXP USA Inc.
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Series:
TrenchMOS™
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Packaging:
Tube
-
Part Status:
Obsolete
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
200V
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Current - Continuous Drain (Id) @ 25°C:
5.2A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
400mOhm @ 4.5A, 10V
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Vgs(th) (Max) @ Id:
4V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
24nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
959pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
25W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
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Supplier Device Package:
TO-220F
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Package / Case:
TO-220-3 Full Pack, Isolated Tab
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Base Part Number:
PHX9
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detail:
N-Channel 200V 5.2A (Tc) 25W (Tc) Through Hole TO-220F