دیتاشیت PSMN003-30B,118
مشخصات دیتاشیت
نام دیتاشیت | PSMN003-30B,30P |
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حجم فایل | 298.61 کیلوبایت |
نوع فایل | |
تعداد صفحات | 13 |
دانلود دیتاشیت PSMN003-30B,30P |
PSMN003-30B,30P Datasheet |
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مشخصات
- Manufacturer: NXP USA Inc.
- Series: TrenchMOS™
- Packaging: Tape & Reel (TR)
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number: PSMN0
- detail: N-Channel 30V 75A (Tc) 230W (Tc) Surface Mount D2PAK