2N7000,126 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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2N7000 Datasheet
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حجم فایل
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281.212
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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13
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مشخصات فنی
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Manufacturer:
NXP USA Inc.
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Series:
TrenchMOS™
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Packaging:
Tape & Box (TB)
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Part Status:
Obsolete
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
300mA (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
5Ohm @ 500mA, 10V
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Vgs(th) (Max) @ Id:
2V @ 1mA
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
40pF @ 10V
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FET Feature:
-
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Power Dissipation (Max):
830mW (Ta)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-92-3
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Base Part Number:
2N70
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detail:
N-Channel 60V 300mA (Tc) 830mW (Ta) Through Hole TO-92-3
