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BC559C,116 Datasheet
Datasheet specifications
| Datasheet's name | BC559 |
|---|---|
| File size | 218.765 KB |
| File type | |
| Number of pages | 7 |
Download Datasheet BC559 |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- Manufacturer: NXP USA Inc.
- Series: -
- Packaging: Tape & Reel (TR)
- Part Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Base Part Number: BC55
- detail: Bipolar (BJT) Transistor PNP 30V 100mA 100MHz 500mW Through Hole TO-92-3