2N5401,412 دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
2N5401
|
|
حجم فایل
|
53.859
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
6
|
مشخصات فنی
-
Manufacturer:
NXP USA Inc.
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Obsolete
-
Transistor Type:
PNP
-
Current - Collector (Ic) (Max):
300mA
-
Voltage - Collector Emitter Breakdown (Max):
150V
-
Vce Saturation (Max) @ Ib, Ic:
500mV @ 5mA, 50mA
-
Current - Collector Cutoff (Max):
50nA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 10mA, 5V
-
Power - Max:
630mW
-
Frequency - Transition:
300MHz
-
Operating Temperature:
150°C (TJ)
-
Mounting Type:
Through Hole
-
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
-
Supplier Device Package:
TO-92-3
-
Base Part Number:
2N54
-
detail:
Bipolar (BJT) Transistor PNP 150V 300mA 300MHz 630mW Through Hole TO-92-3
