2N5551,412 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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2N5550,51
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حجم فایل
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55.202
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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7
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مشخصات فنی
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Manufacturer:
NXP USA Inc.
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Series:
-
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Packaging:
Tube
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Part Status:
Obsolete
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Transistor Type:
NPN
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Current - Collector (Ic) (Max):
300mA
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Voltage - Collector Emitter Breakdown (Max):
160V
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Vce Saturation (Max) @ Ib, Ic:
200mV @ 5mA, 50mA
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Current - Collector Cutoff (Max):
50nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
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Power - Max:
630mW
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Frequency - Transition:
300MHz
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Through Hole
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
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Supplier Device Package:
TO-92-3
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Base Part Number:
2N55
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detail:
Bipolar (BJT) Transistor NPN 160V 300mA 300MHz 630mW Through Hole TO-92-3
