PMN50XP,165 数据手册
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技术规格
- Manufacturer: NXP USA Inc.
- Series: TrenchMOS™
- Packaging: Tape & Reel (TR)
- Part Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
- Base Part Number: PMN5
- detail: P-Channel 20V 4.8A (Tc) 2.2W (Tc) Surface Mount 6-TSOP