PDTB113ZK,115 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت PDTB113Z Series-Isee	دانلود دیتاشیت

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Manufacturer: NXP USA Inc.
Series: -
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3; MPAK
Base Part Number: PDTB11
detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 250mW Surface Mount SMT3; MPAK