دیتاشیت VP2206N3-G-P003
مشخصات دیتاشیت
| نام دیتاشیت |
VP2206
|
| حجم فایل |
709.319
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Microchip Tech VP2206N3-G-P003
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
740mW
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Input Capacitance (Ciss@Vds):
450pF@25V
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Continuous Drain Current (Id):
640mA
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Gate Threshold Voltage (Vgs(th)@Id):
3.5V@10mA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
900mΩ@3.5A,10V
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Package:
TO-92-3
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Manufacturer:
Microchip Tech
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Series:
-
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Packaging:
Tape & Reel (TR)
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
640mA (Tj)
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Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
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Rds On (Max) @ Id, Vgs:
900mOhm @ 3.5A, 10V
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Vgs(th) (Max) @ Id:
3.5V @ 10mA
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
450pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
740mW (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-92-3
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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detail:
P-Channel 60V 640mA (Tj) 740mW (Tc) Through Hole TO-92-3
