دیتاشیت BUK9E1R8-40E,127
مشخصات دیتاشیت
نام دیتاشیت |
BUK9E1R8-40E
|
حجم فایل |
214.956
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
12
|
مشخصات
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Manufacturer:
NXP USA Inc.
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Series:
-
-
Packaging:
Tube
-
Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
40V
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Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
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Rds On (Max) @ Id, Vgs:
1.7mOhm @ 25A, 10V
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Vgs(th) (Max) @ Id:
2.1V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
120nC @ 5V
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Vgs (Max):
±10V
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Input Capacitance (Ciss) (Max) @ Vds:
16400pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
349W (Tc)
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Operating Temperature:
-55°C ~ 175°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
I2PAK
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Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
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Base Part Number:
BUK9
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detail:
N-Channel 40V 120A (Tc) 349W (Tc) Through Hole I2PAK