PSMN8R5-100XSQ 数据手册
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技术规格
- Manufacturer: NXP USA Inc.
- Series: -
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 49A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5512pF @ 50V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Base Part Number: PSMN8
- detail: N-Channel 100V 49A (Tj) 55W (Tc) Through Hole TO-220F