دیتاشیت MMBT5550
مشخصات دیتاشیت
| نام دیتاشیت |
MMBT5550
|
| حجم فایل |
75.166
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
3
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Jiangsu Changjing Electronics Technology Co., Ltd. MMBT5550
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
600mA
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Power Dissipation (Pd):
225mW
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Transition Frequency (fT):
-
-
DC Current Gain (hFE@Ic,Vce):
60@10mA,5V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
140V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
250mV@50mA,5mA
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Package:
SOT-23
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Manufacturer:
Jiangsu Changjing Electronics Technology Co., Ltd.
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Part id:
34885
