30N06 数据手册
其他文档
30N06 9 pages
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: UMW(Youtai Semiconductor Co., Ltd.) 30N06
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 55W
- Total Gate Charge (Qg@Vgs): 25nC@10V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 1562pF@25V
- Continuous Drain Current (Id): 30A
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 29mΩ@15A,10V
- Package: TO-252
- Manufacturer: UMW(Youtai Semiconductor Co., Ltd.)
- Part id: 413387
