دیتاشیت 3DD13003
مشخصات دیتاشیت
نام دیتاشیت |
3DD13003
|
حجم فایل |
161.987
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
2
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Jiangsu Changjing Electronics Technology Co., Ltd. 3DD13003
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
1.5A
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Power Dissipation (Pd):
1.5W
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Transition Frequency (fT):
5MHz
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DC Current Gain (hFE@Ic,Vce):
25@500mA,5V
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Collector Cut-Off Current (Icbo):
1mA
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Collector-Emitter Breakdown Voltage (Vceo):
400V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
600mV@1A,250mA
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Package:
TO-126
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Manufacturer:
Jiangsu Changjing Electronics Technology Co., Ltd.
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Part id:
138709