دیتاشیت STD10NM60N
مشخصات دیتاشیت
| نام دیتاشیت |
STD10NM60N
|
| حجم فایل |
328.443
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
2
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
STMicroelectronics STD10NM60N
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
70W
-
Total Gate Charge (Qg@Vgs):
19nC@10V
-
Drain Source Voltage (Vdss):
600V
-
Input Capacitance (Ciss@Vds):
540pF@50V
-
Continuous Drain Current (Id):
10A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
550mΩ@10V,4A
-
Package:
TO-252-2(DPAK)
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Manufacturer:
STMicroelectronics
-
Part id:
1086716
