S8550-D Datasheet

S8550-D

Datasheet specifications

Datasheet's name S8550-D
File size 42.779 KB
File type pdf
Number of pages 6

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S8550-D 2 pages

Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Foshan Blue Rocket Elec S8550-D
  • Transistor Type: PNP
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 800mA
  • Power Dissipation (Pd): 625mW
  • Transition Frequency (fT): 200MHz
  • DC Current Gain (hFE@Ic,Vce): 160@100mA,1V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 25V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 280mV@500mA,50mA
  • Package: TO-92L
  • Manufacturer: Foshan Blue Rocket Elec
  • Part id: 650495

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