دیتاشیت SUD09P10-195-GE3
مشخصات دیتاشیت
نام دیتاشیت | SUD09P10-195-GE3 |
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حجم فایل | 1071.99 کیلوبایت |
نوع فایل | |
تعداد صفحات | 9 |
دانلود دیتاشیت SUD09P10-195-GE3 |
SUD09P10-195-GE3 Datasheet |
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مشخصات
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech SUD09P10-195-GE3
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 2.5W;32.1W
- Total Gate Charge (Qg@Vgs): 34.8nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 1055pF@50V
- Continuous Drain Current (Id): 8.8A
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 195mΩ@10,3.6A
- Package: TO-252-2(DPAK)
- Manufacturer: Vishay Intertech
- Part id: 1233827